maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a power dissipation p d 0.9 w* operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 139 c/w* electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r = 10v 20 a i r v r = 30v 100 a bv r i r = 500 a40v v f i f = 100 a 0.13 v v f i f = 1.0ma 0.21 v v f i f = 10ma 0.27 v v f i f = 100ma 0.35 v v f i f = 500ma 0.47 v c t v r =1.0v, f=1.0mhz 50 pf CTLSH05-4M521 surface mount low v f silicon schottky diode tlm521 case central semiconductor corp. tm r1 (27-april 2006) description: the central semiconductor CTLSH05-4M521 low v f schottky diode is a high quality schottky diode designed for applications where small size and operational effciency are the prime requirements. with a maximum power dissipation of 0.9w, and a very small package footprint (comparable to the sot-563), this leadless package design is capable of dissipating over 3 times the power of similar devices in comparable sized surface mount packages. features: ? very small package size ? high thermal efficiency ? current (i f =0.5a) ? small tlm 2x1mm case ? low forward voltage drop (v f =0.47v max @ 0.5a) applications: ? dc/dc converters ? battery powered portable ? voltage clamping equipment ? protection circuits *fr-4 epoxy pcb with copper mounting pad area of 33mm 2 marking code: ca bottom view top view
central semiconductor corp. tm tlm521 case - mechanical outline CTLSH05-4M521 surface mount low v f silicon schottky diode r1 (27-april 2006) lead code: 1) cathode 2) cathode 3) cathode 4) anode 5) anode marking code: ca suggested mounting pad layout for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm521 package details
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